Simulation of Semiconductor Quantum Well Lasers using Gain Tables

Chapter 1
Introduction
Generally speaking, this work is a further small step in trying to narrow down the gap between simulation and real-world measurement results.
Matching simulations and measurements is the starting point for Computer Aided Engineering (CAE) of future semiconductor devices.a
Semiconductor lasers are important light sources for fiber-optic communications and are key components of applications such as laser printers, compact disc players. One device currently to our disposal gets used as an optical pump laser for erbium doped fiber amplifiers (EDFA) in metropolitan area network (MAN) repeaters. Lasers in such applications are so-called semiconductor heterostructure lasers, i.e. diodes consisting of an active region sandwiched between doped semiconductor cladding layers [4].
Intensive research is done both, in the semiconductor industry and at academic institutions to investigate new materials and structures that will allow to build the next generation of semiconductor laser devices. The design process offers many degrees of freedom which are strongly related to the
richness of the underlying physical effects that influence the device characteristics.

In order to design a laser diode, good knowledge is required in the field of electromagnetics, quantum mechanics, solid-state physics and semiconductor fabrication technology. Hence, physical modeling has become an integral part of industrial engineering and development.

At the Integrated Systems Laboratory (IIS) of the Swiss Federal Institute of Technology (ETH), the device simulation program DESSIS-LASER
is being developed. It can be applied to the simulation of semiconductor laser devices of different types. The development is carried out in close collaboration with ISE Integrated Systems Engineering AG and laser device manufacturers.
In this work built in calculations of DESSIS-LASER are compared with a novel gain model and look up table approach which is supposed to be more efficient in terms of simulation speed and accuracy. In particular, three dimensional multi quantum well simulations will be possible by the use of